Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures

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DOI Доступ к ресурсу на сайте издателя			10.1088/1361-6641/ab7beb

Title: Admittance of metal-insulator-semiconductor devices based on HgCdTe nBn structures
Creator: Nesmelov, Sergey N.
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Dzyadukh, Stanislav M.
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Dvoretsky, Sergei A.
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Mikhailov, Nikolay N.
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Sidorov, Georgiy Yu.
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Yakushev, Maxim V.
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Voytsekhovskiy, Alexander V.
Date: 2020
DOI: 10.1088/1361-6641/ab7beb
Description: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on